Product Advantages | CHARACTERISTIC
1. Multi-function: The product include shooting, continuous fluoroscopy, pulsed fluoroscopy; breakthrough of the limit of regular Static DR
2. Multi-functional DR HVG: The product instead of regular DR, both with dynamic and static functions, improving the competitiveness of the whole X-ray machine.
3. On basis of SiC MOSFETtechnicalplatform; Inversionfrequencyachieve to500kHZ
4. Voltage risingtime≤800μs；Suppress the motionartifact efficiently
5. Easier Registration：Register for one machine with high-power & high-voltage Valid for all reduced performance dynamic/staticfunctions；Remote Telediagnosis & Maintenance System
6. More compact structure；More convenient integration；More advanced outfit
7. Easier Installation：Smaller & Leighter
8. Achieve remote T & M promptly with authority；More efficiently and less cost
9. Better Anti-interference：Increasing multi-level EMC processingin the PFC circuit
10. Real-time closed loop regulation upon mA output, ensuring the accuracy of each exposed mA amount
Product Advantages | CHARACTERISTIC
1. Multi-function: The product include shooting, continuous fluoroscopy, pulsed fluoroscopy; breakthrough of the limit of regular Static DR
2. Multi-functional DR HVG: The product instead of regular DR, both with dynamic and static functions, improving the competitiveness of the whole X-ray machine.
3. On basis of SiC MOSFETtechnicalplatform; Inversionfrequencyachieve to500kHZ
4. Voltage risingtime≤800μs；Suppress the motionartifact efficiently
5. Easier Registration：Register for one machine with high-power & high-voltage Valid for all reduced performance dynamic/staticfunctions；Remote Telediagnosis & Maintenance System
6. More compact structure；More convenient integration；More advanced outfit
7. Easier Installation：Smaller & Leighter
8. Achieve remote T & M promptly with authority；More efficiently and less cost
9. Better Anti-interference：Increasing multi-level EMC processingin the PFC circuit
10. Real-time closed loop regulation upon mA output, ensuring the accuracy of each exposed mA amount
